Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity

TL;DR

This paper investigates the formation, defects, and electronic properties of Ge/Si(001) heterostructures with quantum dots, highlighting their potential for infrared detection and terahertz conductivity applications.

Contribution

It provides new insights into low-temperature growth, defect formation, and the terahertz conductivity of Ge/Si heterostructures with quantum dots.

Findings

Low-temperature growth enables high-quality multilayer films.

Photovoltaic effects observed in Ge quantum dot-based Si structures.

Terahertz conductivity data obtained across a wide temperature range.

Abstract

Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect multilayer films. Exploration of the photovoltaic effect in Si p--i--n-structures with Ge quantum dots allowed us to propose a new approach to designing of infrared detectors. First data on THz dynamical conductivity of Ge/Si(001) heterostructures in the temperature interval from 5 to 300 K and magnetic fields up to 6 T are reported.