Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon

TL;DR

This paper investigates the charge transfer dynamics between a silicon quantum dot and a single phosphorus donor, using a silicon MOSFET to probe donor ionization states and measure tunneling times.

Contribution

It introduces a method to study donor-quantum dot interactions in silicon using conductance measurements in a MOSFET device with dual gating.

Findings

Measured temperature and magnetic field independent tunneling times.

Observed electron transfer statistics when donor ground state aligns with quantum dot states.

Demonstrated control of donor charge states via device gates.

Abstract

We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field effect transistor) biased near threshold in the SET regime with two side gates to control both the device conductance and the donor charge. Temperature and magnetic field independent tunneling time is measured. We measure the statistics of the transfer of electrons observed when the ground state D0 of the donor is aligned with the SET states.