Magnetoplasmon resonance in 2D electron system driven into a zero-resistance state
A. T. Hatke, M. A. Zudov, J. D. Watson, and M. J. Manfra

TL;DR
This paper investigates a strong magnetoplasmon resonance in a high mobility 2D electron system under microwave radiation, revealing insights into zero-resistance states and negative resistance phenomena.
Contribution
It provides experimental evidence linking magnetoplasmon resonance to zero-resistance states and negative resistance in a high mobility quantum well system.
Findings
Observation of a sharp photoresistance peak from magnetoplasmon resonance
Evidence of negative background resistance related to zero-resistance states
Robustness of the magnetoplasmon resonance peak under applied dc fields
Abstract
We report on a remarkably strong, and a rather sharp, photoresistance peak originating from a dimensional magnetoplasmon resonance (MPR) in a high mobility GaAs/AlGaAs quantum well driven by microwave radiation into a zero-resistance state (ZRS). The analysis of the MPR signalreveals a negative background providing experimental evidence for the concept of absolute negative resistance associated with the ZRS. When a system is further subject to a dc field, the maxima of microwave-induced resistance oscillations decay away and a system reveals a state with close-to-zero differential resistance. The MPR peak, on the other hand, remains essentially unchanged, indicating surprisingly robust Ohmic behavior under the MPR conditions.
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