Non-volatile gated variable resistor based on doped La_{2}CuO_{4} and SrTiO_{3} heterostructures

TL;DR

This paper reports on the fabrication of non-volatile gated variable resistors using doped La_{2}CuO_{4} and SrTiO_{3} heterostructures, demonstrating conductance changes governed by an empirical law linked to ionic transport.

Contribution

It introduces a novel heterostructure-based resistive device with a specific empirical conductance change law related to ionic transport mechanisms.

Findings

Conductance change follows a power-law dependence on write current and time.

The behavior aligns with ionic transport accelerated by electric fields.

The heterostructure exhibits non-volatile resistive switching.

Abstract

Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped La_{2}CuO_{4} and SrTiO_{3} layers. Their conductance change as function of write current I and write time t followed a simple empirical law of the form {\Delta}G/G = CI^A t^B. This behavior is in agreement with ionic transport that accelerates exponentially with electrical field strength.