Phase Diagrams of Bi1-xSbx Thin Films with Different Growth Orientations
Shuang Tang, Mildred S. Dresselhaus
TL;DR
This paper develops a model to analyze how quantum confinement affects band-edge shifts in BiSb thin films with various growth orientations, providing phase diagrams that reveal orientation-dependent electronic properties.
Contribution
A closed-form model for quantum confinement effects in BiSb thin films with different growth orientations is introduced, enabling phase diagram calculations.
Findings
Phase diagrams vary significantly with growth orientation.
Quantum confinement causes notable band-edge shifts.
Symmetries of carrier pockets depend on crystal orientation.
Abstract
A closed-form model is developed to evaluate the band-edge shift caused by quantum confinement for a two-dimensional non-parabolic carrier-pocket. Based on this model, the symmetries and the band-shifts of different carrier-pockets are evaluated for BiSb thin films that are grown along different crystalline axes. The phase diagrams for the BiSb thin film systems with different growth orientations are calculated and analyzed.
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