Large thermal Hall coefficient in bismuth

TL;DR

This study reports a large thermal Hall coefficient in bismuth, attributed to high mobility and low thermal conductivity, offering potential for heat current control in electronic devices.

Contribution

It provides the first systematic measurement of the thermal Hall effect in bismuth and explains its origin related to mobility and thermal conductivity.

Findings

Thermal Hall coefficient in bismuth is comparable to that in HgSe.

High mobility and low thermal conductivity are key factors.

Results suggest new routes for heat management in electronics.

Abstract

We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.