Precision quantization of Hall resistance in transferred graphene

TL;DR

This study demonstrates that transferred graphene can serve as a highly precise quantum resistance standard, matching the performance of traditional semiconductor devices, thus broadening the practical applications of graphene in metrology.

Contribution

It shows that transferred graphene can achieve quantum resistance standards with precision comparable to epitaxially grown graphene, despite transfer-related challenges.

Findings

Achieved quantization with (-5.1 ± 6.3) × 10⁻⁹ uncertainty

Demonstrated vanishing longitudinal resistance at >10 μA current

Validated transfer methods for high-precision quantum resistance standards

Abstract

We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm 6.3) \times 10-9 accompanied by a vanishing longitudinal resistance at current levels exceeding 10 \muA. While such performance had previously only been achieved with epitaxially grown graphene, our experiments demonstrate that transfer steps, inevitable for exfoliated graphene or graphene grown by chemical vapor deposition (CVD), are compatible with the requirements of high quality quantum resistance standards.