Effect of electron-electron interaction near the metal-insulator transition in doped semiconductors studied within the local density approximation

TL;DR

This paper investigates how electron-electron interactions influence the metal-insulator transition in doped semiconductors using a numerical model that includes disorder and density functional theory.

Contribution

It introduces a numerical model combining disorder and electron interactions within the local density approximation to study the metal-insulator transition.

Findings

Preliminary results indicate a metal-insulator transition in the model.

The model accounts for disorder from random donor impurity distribution.

Electron-electron interactions are incorporated via density functional theory.

Abstract

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition.