Growth of Oriented Au Nanostructures: Role of Oxide at the Interface

TL;DR

This study investigates how oxide layers influence the formation and orientation of gold nanostructures on silicon substrates during high-temperature annealing in low vacuum conditions.

Contribution

It demonstrates the critical role of interfacial oxide layers and specific annealing conditions in growing oriented gold nanostructures on silicon.

Findings

Interfacial oxide layer is essential for orientation.

High temperature and low vacuum are necessary for growth.

Gold structures can be transferred by scratching.

Abstract

We report on the formation of oriented gold nano structures on Si(100) substrate by annealing procedures in low vacuum (\approx10-2 mbar) and at high temperature (\approx 975^{\circ} C). Various thicknesses of gold films have been deposited with SiOx (using high vacuum thermal evaporation) and without SiOx (using molecular beam epitaxy) at the interface on Si(100). Electron microscopy measurements were performed to determine the morphology, orientation of the structures and the nature of oxide layer. Interfacial oxide layer, low vacuum and high temperature annealing conditions are found to be necessary to grow oriented gold structures. These gold structures can be transferred by simple scratching method.