Inverse Spin Hall Effect in Ferromagnetic Metal with Rashba Spin Orbit Coupling
M.-J. Xing, M. B. A. Jalil, Seng Ghee Tan, Y. Jiang

TL;DR
This paper demonstrates an intrinsic inverse spin Hall effect in ferromagnetic metals with Rashba spin orbit coupling, enabling charge current-driven Hall voltage without external spin injection, with potential for memory and logic devices.
Contribution
It reveals a new intrinsic ISHE mechanism in ferromagnetic metals with Rashba coupling, independent of external spin current injection.
Findings
Hall voltage generated by charge current in FM with RSOC
Hall voltage polarity switches with FM moment direction
Potential application in memory/readout technologies
Abstract
We report an intrinsic form of the inverse spin Hall effect (ISHE) in ferromagnetic (FM) metal with Rashba spin orbit coupling (RSOC), which is driven by a normal charge current. Unlike the conventional form, the ISHE can be induced without the need for spin current injection from an external source. Our theoretical results show that Hall voltage is generated when the FM moment is perpendicular to the ferromagnetic layer. The polarity of the Hall voltage is reversed upon switching the FM moment to the opposite direction, thus promising a useful readback mechanism for memory or logic applications.
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Taxonomy
TopicsMagnetic properties of thin films · Quantum and electron transport phenomena · Magnetic and transport properties of perovskites and related materials
