A unique metal-semiconductor interface and resultant electron transfer phenomenon

TL;DR

This paper reports a novel metal-semiconductor interface in reduced rutile TiO2 that enables unidirectional electron transfer to metal particles, affecting their charge state and providing surface protection.

Contribution

It introduces a unique metal-semiconductor interface formed when metal particles grow from the semiconductor substrate, revealing a new electron transfer phenomenon.

Findings

Identified a rectifying interface acting as a one-way electron gateway.

Demonstrated electron transfer from TiO2 to metal particles based on work functions.

Showed metal particles gain negative charge, enabling cathodic protection.

Abstract

An unusual electron transfer phenomenon has been identified from an n-type semiconductor to Schottky metal particles, the result of a unique metal semiconductor interface that results when the metal particles are grown from the semiconductor substrate. The unique interface acts as a one-way (rectifying) open gateway and was first identified in reduced rutile polycrystalline titanium dioxide (an n-type semiconductor) to Group VIII (noble) metal particles. The interface significantly affects the Schottky barrier height resulting in electron transfer to the metal particles from the reduced rutile titanium dioxide (TiO2) based on their respective work functions. The result is a negative charge on the metal particles which is of sufficient magnitude and duration to provide cathodic protection of the metal particles from surface oxidation.