All-electrical injection and detection of a spin polarized current using 1D conductors

TL;DR

This paper demonstrates on-chip electrical control of spin polarization in a 1D conductor, enabling tunable spin injection and detection crucial for spintronics and quantum computing applications.

Contribution

It introduces a method for all-electrical spin injection and detection using gate-defined 1D conductors, moving beyond conventional Ohmic regimes.

Findings

Achieved direct measurement of spin polarization in 1D conductors.

Demonstrated tunable spin polarization via gate voltages.

Showed potential for integrated spintronic devices.

Abstract

All-electrical control of spin transport in nanostructures has been the central interest and chal- lenge of spin physics and spintronics. Here we demonstrate on-chip spin polarizing/filtering actions by driving the gate-defined one dimensional (1D) conductor, one of the simplest geometries for integrated quantum devices, away from the conventional Ohmic regime. Direct measurement of the spin polarization of the emitted current was performed when the momentum degeneracy was lifted, wherein both the 1D polarizer for spin injection and the analyzer for spin detection were demonstrated. The results showed that a configuration of gates and applied voltages can give rise to a tunable spin polarization, which has implications for the development of spintronic devices and future quantum information processing.