A many-electron tight binding method for the analysis of quantum dot systems

TL;DR

This paper introduces a comprehensive many-electron computational method using atomistic tight-binding basis functions to analyze quantum dot systems, effectively capturing electron correlation, valley physics, and disorder effects.

Contribution

It presents a novel full configuration interaction approach tailored for solid state quantum dots with few electrons, integrating atomistic details and electron correlation.

Findings

Successfully applied to a two-electron silicon double quantum dot

Accurately captures valley physics and disorder effects

Provides detailed insights into quantum dot energy spectra

Abstract

We present a method which computes many-electron energies and eigenfunctions by a full configuration interaction which uses a basis of atomistic tight-binding wave functions. This approach captures electron correlation as well as atomistic effects, and is well suited to solid state quantum dot systems containing few electrons, where valley physics and disorder contribute significantly to device behavior. Results are reported for a two-electron silicon double quantum dot as an example.