Quantum Hall transitions: An exact theory based on conformal restriction

TL;DR

This paper develops an exact analytical framework for the quantum Hall plateau transition using conformal restriction and conformal field theory, providing explicit calculations of conductance correlations and critical exponents.

Contribution

It introduces a novel approach based on conformal restriction and CFT to analyze quantum Hall transitions, connecting stochastic geometry with critical phenomena in disordered systems.

Findings

Disorder-averaged PCCs relate to conformal restriction measures.

Calculated critical exponents for boundary conductance correlations.

Results applicable to various 2D disordered electronic systems.

Abstract

We revisit the problem of the plateau transition in the integer quantum Hall effect. Here we develop an analytical approach for this transition, based on the theory of conformal restriction. This is a mathematical theory that was recently developed within the context of the Schramm-Loewner evolution which describes the stochastic geometry of fractal curves and other stochastic geometrical fractal objects in 2D space. Observables elucidating the connection with the plateau transition include the so-called point-contact conductances (PCCs) between points on the boundary of the sample, described within the language of the Chalker-Coddington network model. We show that the disorder-averaged PCCs are characterized by classical probabilities for certain geometric objects in the plane (pictures), occurring with positive statistical weights, that satisfy the crucial restriction property with respect to changes in the shape of the sample with absorbing boundaries. Upon combining this restriction property with the expected conformal invariance at the transition point, we employ the mathematical theory of conformal restriction measures to relate the disorder-averaged PCCs to correlation functions of primary operators in a conformal field theory (of central charge $c=0$). We show how this can be used to calculate these functions in a number of geometries with various boundary conditions. Since our results employ only the conformal restriction property, they are equally applicable to a number of other critical disordered electronic systems in 2D. For most of these systems, we also predict exact values of critical exponents related to the spatial behavior of various disorder-averaged PCCs.