Graphene-like metallic-on-silicon field effect transistor

TL;DR

This paper introduces a novel field effect transistor with a 2D electron gas channel at a Ni-silicon interface, demonstrating gate modulation and unique unipolar transport properties similar to graphene-based transistors.

Contribution

It presents the first demonstration of a graphene-like, metallic-on-silicon FET with gate-controlled 2D electron gas at a metal-semiconductor interface.

Findings

Gate voltage modulates the 2D electron gas channel.

Drain current shows no saturation, similar to graphene FETs.

Transport is unipolar, unlike graphene's ambipolar behavior.

Abstract

In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that the two-dimensional electron gas channel is modulated by the gate voltage. The dependence of the drain current on the drain voltage has no saturation region, similar to a field effect transistor based on graphene. However, the transport in this transistor is not ambipolar, as in graphene, but unipolar.