Atomic frequency comb memory with spin wave storage in 153Eu3+:Y2SiO5

TL;DR

This paper demonstrates an atomic frequency comb quantum memory with spin wave storage in 153Eu3+:Y2SiO5, achieving storage times over 10 microseconds and analyzing factors affecting efficiency and linewidth.

Contribution

It presents the first implementation of an atomic frequency comb memory with spin wave storage in 153Eu3+:Y2SiO5, advancing solid-state quantum memory technology.

Findings

Storage time slightly beyond 10 microseconds

Inhomogeneous spin linewidth measured at 69 ± 3 kHz

Analysis of storage efficiency and improvement strategies

Abstract

153Eu3+:Y2SiO5 is a very attractive candidate for a long lived, multimode quantum memory due to the long spin coherence time (~15 ms), the relatively large hyperfine splitting (100 MHz) and the narrow optical homogeneous linewidth (~100 Hz). Here we show an atomic frequency comb memory with spin wave storage in a promising material 153Eu3+:Y2SiO5, reaching storage times slightly beyond 10 {\mu}s. We analyze the efficiency of the storage process and discuss ways of improving it. We also measure the inhomogeneous spin linewidth of 153Eu3+:Y2SiO5, which we find to be 69 \pm 3 kHz. These results represent a further step towards realising a long lived multi mode solid state quantum memory.