Angle dependent conductance in graphene

TL;DR

This paper presents a theoretical analysis of angle-dependent conductance in monolayer graphene, deriving analytical expressions for transmission and conductance across potential barriers, relevant for graphene-based electronic devices.

Contribution

It introduces a new analytical method to calculate angle-dependent conductance in graphene with potential barriers, modeling top gate effects in transistors.

Findings

Effective gap induced at all incident angles

Analytical expression for transmission coefficient

Conductance behavior modeled for top gate potential

Abstract

In this paper, we study a theoretical method to calculate the conductance across a square barrier potential in monolayer graphene. We have obtained an analytical expression for the transmission coefficient across a potential barrier for monolayer graphene. Using the transmission coefficient obtained we have an analytical expression for the conductance. This expression will be used to calculate the conductance in the case in which there is a potential barrier, which in our case will modelise the behaviour of a top gate voltage of a field effect transistor. Once this analysis has been performed we study the scenario in which carriers scatter with the potential barrier with different incidence angles and we have found that for any incident angle an effective gap is induced.