Conduction, diffusion and noise of electrons in amorphous chalcogenides at low electric fields

TL;DR

This study investigates low-field electron conduction, diffusion, and noise in amorphous chalcogenides using Monte Carlo simulations of three-dimensional variable-range hopping, revealing key features of linear-response behavior in Ge2Sb2Te5.

Contribution

It introduces a comprehensive Monte Carlo simulation approach for analyzing low-field electron transport and noise in amorphous chalcogenides, providing new insights into their linear-response regime.

Findings

Identification of carrier-velocity autocorrelation characteristics

Analysis of noise power spectrum in amorphous chalcogenides

Quantification of diffusion coefficient and ohmic conductivity

Abstract

The low-field electron diffusion, noise, and the conduction in amorphous chalcogenides are investigated by means of a Monte Carlo implementation of a full three- dimensional variable-range hopping transport model between localized states. Quantities like the carrier-velocity autocorrelation function, the noise power spectrum, the diffusion coefficient and the ohmic conductivity are obtained from numerical simulations at room temperatures and lower. Some interesting features of the linear-response regime typical of hopping transport are observed and discussed for the case of the amorphous Ge2Sb2Te5.