Characterization of new hybrid pixel module concepts for the ATLAS Insertable B-Layer upgrade

TL;DR

This paper compares two innovative hybrid pixel module concepts, planar and 3D silicon sensors, for the ATLAS IBL upgrade, demonstrating high performance and robustness after irradiation to meet LHC requirements.

Contribution

It introduces and evaluates two new module concepts based on FE-I4 readout chips, showing their suitability for high-radiation environments in the ATLAS IBL upgrade.

Findings

Both sensor concepts achieve >97% hit efficiency after irradiation.

Modules operate effectively at low thresholds with minimal noise.

Prototype modules meet the specifications for the ATLAS IBL upgrade.

Abstract

The ATLAS Insertable B-Layer (IBL) collaboration plans to insert a fourth pixel layer inside the present Pixel Detector to recover from eventual failures in the current pixel system, especially the b-layer. Additionally the IBL will ensure excellent tracking, vertexing and b-tagging performance during the LHC phase I and add robustness in tracking with high luminosity pile-up. The expected peak luminosity for IBL is 2 to 3centerdot1034 cm-2s-1 and IBL is designed for an integrated luminosity of 700 fb-1. This corresponds to an expected fluence of 5centerdot1015 1 MeV neqcm-2 and a total ionizing dose of 250 MRad. In order to cope with these requirements, two new module concepts are under investigation, both based on a new front end IC, called FE-I4. This IC was designed as readout chip for future ATLAS Pixel Detectors and its first application will be the IBL. The planar pixel sensor (PPS) based module concept benefits from its well understood design, which is kept as similar as possible to the design of the current ATLAS Pixel Detector sensor. The second approach of the new three dimensional (3D) silicon sensor technology benefits from the shorter charge carrier drift distance to the electrodes, which completely penetrate the sensor bulk. Prototype modules of both sensor concepts have been build and tested in laboratory and test beam environment before and after irradiation. Both concepts show very high performance even after irradiation to 5centerdot1015 1 MeV neqcm-2 and meet the IBL specifications in terms of hit efficiency being larger than 97%. Lowest operational threshold studies have been effected and prove independent of the used sensor concept the excellent performance of FE-I4 based module concepts in terms of noise hit occupancy at low thresholds.