Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors
M. Birowska, C. Sliwa, J. A. Majewski, T. Dietl
TL;DR
This paper investigates the origin of bulk uniaxial magnetic anisotropy in zinc-blende dilute magnetic semiconductors, linking atomic-scale Mn pair distributions to macroscopic anisotropic magnetic properties.
Contribution
It reveals that specific Mn pair arrangements on GaAs surfaces induce uniaxial anisotropy, supported by theoretical and computational analysis matching experimental data.
Findings
Mn pairs prefer the [-110] direction on GaAs (001) surface
The Mn distribution causes bulk uniaxial anisotropies
Theoretical and ab initio results agree with experiments
Abstract
It is demonstrated that the nearest neighbor Mn pair on the GaAs (001) surface has a lower energy for the [-110] direction comparing to the [110] case. According to the group theory and the Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results.
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