Unifying explanation for carrier relaxation anomaly in gapped systems
Shota Ono, Hiroyuki Shima, and Yasunori Toda

TL;DR
This paper presents a unified theory explaining the anomalous carrier relaxation times in gapped systems near transition temperatures, emphasizing the role of transverse acoustic phonons and validated by experimental data fitting.
Contribution
It introduces a comprehensive model for carrier relaxation in gapped systems, highlighting the impact of phonon heat capacity and providing a unified explanation for observed anomalies.
Findings
Transverse acoustic phonons significantly influence relaxation times.
The theory accurately fits experimental data from fullerene polymers.
Carrier relaxation time diverges near the transition temperature.
Abstract
We develop a theory to describe energy relaxation of photo-excited carriers in low-temperature ordered states with band gap opening and formulate carrier relaxation time near and below transition temperature by quantifying contributions from different carrier-phonon scatterings to the relaxation rate. The theory explains anomalous experimental observations of in gapped systems. Transverse acoustic (TA) phonon modes play a crucial role in carrier relaxation; their heat capacity determines -divergence near . The theory is validated by fitting of fullerene polymers onto a theoretical curve.
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Taxonomy
TopicsThermal properties of materials · Semiconductor Quantum Structures and Devices · Semiconductor materials and interfaces
