Bistable optical system based on hysteresis in the reflectivity of grapheneon- Pb(ZrxTi1-x)O3

TL;DR

This paper models the hysteretic reflectivity behavior of a graphene-PZT system, showing potential for fast, nonvolatile optical memory devices operating at telecommunication wavelengths.

Contribution

It introduces a model accounting for electron trapping effects, demonstrating hysteresis in reflectivity suitable for optical bistable memory applications.

Findings

Hysteresis in reflectivity occurs at 1.55 μm wavelength.

Hysteresis can be observed at low gate voltages.

Potential for creating fast, nonvolatile optical memory devices.

Abstract

We analyse a model describing hysteretic behaviour of the reflectivity R for the system 'graphene-Pb(ZrxTi1-x)O3 (PZT) ferroelectric substrate-gate' with a gate voltage variation, which takes into account trapping of electrons into the graphene-PZT interface states. We demonstrate that the hysteresis in the R parameter can be observed experimentally for the telecommunication-range radiation (the wavelength {\lambda} = 1.55 {\mu}m) at low gate voltages and, moreover, the phenomenon can be used while creating fast bistable systems for the novel nonvolatile memory devices with on-chip optical interconnection.