What Causes High Resistivity in CdTe

TL;DR

This paper demonstrates through calculations that shallow donor doping can reliably achieve high resistivity in CdTe, challenging the belief that native deep donors are solely responsible, and emphasizes the importance of shallow defect control for radiation detectors.

Contribution

The study provides a detailed analysis showing shallow donors can be effectively used to control resistivity in CdTe, offering a practical alternative to native deep donor models.

Findings

Shallow donors can reliably produce high resistivity in CdTe.

Deep centers should be avoided to maintain good carrier transport.

Carrier statistics support shallow donor effectiveness in resistivity control.

Abstract

CdTe can be made semi-insulating by shallow donor doping. This is routinely done to obtain high resistivity in CdTe-based radiation detectors. However, it is widely believed that the high resistivity in CdTe is due to the Fermi level pinning by native deep donors. The model based on shallow donor compensation of native acceptors was dismissed based on the assumption that it is practically impossible to control the shallow donor doping level so precisely that the free carrier density can be brought below the desired value suitable for radiation detection applications. In this paper, we present our calculations on carrier statistics and energetics of shallow donors and native defects in CdTe. Our results show that the shallow donor can be used to reliably obtain high resistivity in CdTe. Since radiation detection applications require both high resistivity and good carrier transport, one should generally use shallow donors and shallow acceptors for carrier compensation and avoid deep centers that are effective carrier traps.