Charge carrier localisation in disordered graphene nanoribbons

TL;DR

This paper investigates how substitutional disorder affects charge carrier localization in graphene nanoribbons, providing insights into the metal-insulator transition through density of states analysis and localization scenarios.

Contribution

It offers a detailed analysis of disorder-induced localization in realistic graphene nanoribbons, highlighting the role of percolation transition near the Dirac point.

Findings

Disorder can induce localization of charge carriers in graphene nanoribbons.

Localization effects are prominent near the Dirac point.

The study suggests a percolation transition as a mechanism for the metal-insulator transition.

Abstract

We study the electronic properties of actual-size graphene nanoribbons subjected to substitutional disorder particularly with regard to the experimentally observed metal-insulator transition. Calculating the local, mean and typical density of states, as well as the time-evolution of the particle density we comment on a possible disorder-induced localisation of charge carriers at and close to the Dirac point within a percolation transition scenario.