Electronic band gaps and transport in aperiodic graphene superlattices of Thue-Morse sequence

TL;DR

This study investigates the electronic properties of aperiodic Thue-Morse graphene superlattices, revealing the existence of robust Dirac points and controllable electron transport, which could advance graphene-based electronic devices.

Contribution

It demonstrates the presence of Dirac points in aperiodic Thue-Morse graphene superlattices and explores their robustness and impact on electron transport control.

Findings

Existence of Dirac points at zero-averaged wave number

Zero-$ar{k}$ gap is robust against structural variations

Multiple Dirac points can emerge under certain conditions

Abstract

We have studied the electronic properties in aperiodic graphene superlattices of Thue-Morse sequence. Although the structure is aperiodic, an unusual Dirac point (DP) does exist and its location is exactly at the position of the zero-averaged wave number (zero-$\bar{k})$. Furthermore, the zero-$\bar{k}$ gap associated with the DP is robust against the lattice constants and the incident angles, and multi-DPs can appear under the suitable conditions. A resultant controllability of electron transport in Thue-Morse sequence is predicted, which may facilitate the development of many graphene-based electronics.