Many-body effects on the capacitance of multilayers made from strongly correlated materials
S. T. F. Hale, J. K. Freericks

TL;DR
This paper investigates how strong electron correlations influence the capacitance of multilayer nanostructures, revealing that interaction strength significantly affects capacitance, while temperature and potential have weaker impacts.
Contribution
It applies inhomogeneous dynamical mean-field theory to analyze capacitance in correlated multilayer systems, highlighting the role of interaction strength.
Findings
Interaction strength strongly affects capacitance
Potential and temperature have weaker effects
Capacitance varies with barrier width and screening length
Abstract
Recent work by Kopp and Mannhart on novel electronic systems formed at oxide interfaces has shown interesting effects on the capacitances of these devices. We employ inhomogeneous dynamical mean-field theory to calculate the capacitance of multilayered nanostructures. These multilayered nanostructures are composed of semi-infinite metallic leads coupled via a strongly correlated dielectric barrier region. The barrier region can be adjusted from a metallic regime to a Mott insulator through adjusting the interaction strength. We examine the effects of varying the barrier width, temperature, potential difference, screening length, and chemical potential. We find that the interaction strength has a relatively strong effect on the capacitance, while the potential and temperature show weaker dependence.
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials · Theoretical and Computational Physics
