Coexisting Holes and Electrons in High-Tc Materials: Implications from Normal State Transport

TL;DR

This paper models normal state transport in high-Tc superconductors using a two-band approach, revealing insights into electron and hole contributions and their scattering behaviors.

Contribution

It introduces a self-consistent two-band model for normal state transport in high-Tc materials, integrating resistivity and Hall effect data for multiple samples.

Findings

Electrons exhibit extremely strong scattering.

Electronic residual resistivity aligns with excess conductivity observations.

Electrons have greater effective mass than holes.

Abstract

Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) DC transport data reported for eight bulk-crystal and six oriented-film specimens of YBa2Cu3O7-{\delta}, and (ii) far-infrared Hall angle data reported for YBa2Cu3O7-{\delta} and Bi2Sr2CaCu2O8+{\delta}. The electron band exhibits extremely strong scattering; the extrapolated DC residual resistivity of the electronic component is shown to be consistent with the previously observed excess thermal conductivity and excess electrodynamic conductivity at low temperature. Two-band hole-electron analysis of Hall angle data suggest that the electrons possess the greater effective mass.