Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

TL;DR

This study demonstrates that implanted bismuth donors in isotopically enriched silicon-28 can be electrically activated with minimal diffusion, exhibiting narrow spin resonance linewidths and long coherence times, making them promising for spin qubit applications.

Contribution

It provides the first detailed ESR measurements of implanted bismuth in isotopically enriched silicon-28, showing minimal damage and long coherence times after thermal annealing.

Findings

Narrow ESR linewidths (B_pp=12uT) observed.

Long spin coherence times (T_2=0.7ms) achieved.

Effective electrical activation with minimal diffusion.

Abstract

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.