Room-Temperature Photoluminescence from Er3+ in Si-Er-O and Si-Ge-Er-O Thin Films at High Erbium Concentrations

TL;DR

This study demonstrates that high-concentration Er3+ doped Si-Er-O and Si-Ge-Er-O thin films can produce strong room-temperature photoluminescence, overcoming previous limitations related to non-radiative relaxation and solubility issues.

Contribution

It introduces a vacuum co-evaporation and annealing method to create high-Er concentration silicon-based films with significant photoluminescence at room temperature, which was previously challenging.

Findings

Strong room-temperature PL observed at 1.51 and 1.54 microns

High Er concentrations (~20%) achievable with maintained luminescence

PL attributed to Er-O complex formation and local field effects

Abstract

Prior studies have shown that photoluminescence from Er3+ impurities in silicon is severely limited at room temperature by non-radiative relaxation and solid solubility; and room temperature emission from Er3+ in oxide-based hosts becomes diminished at high erbium concentrations. This work presents studies of thin films (0.2 micron thick) prepared by vacuum co-evaporation from elemental sources (Er, Si and Si/Ge) followed by vacuum annealing (600 degrees C); materials of this type, which are produced with high Er3+ concentrations, are shown to be capable of yielding strong room-temperature photoluminescence. Alloy films of Si-Er-O and Si-Ge-Er-O, containing (20 +/- 2) at. % Er and incorporating (16 +/- 2) at. % O (introduced via vacuum scavenging reactions), exhibit emission bands with dominant components at 1.51 and 1.54 micron (~0.04-micron overall spectral widths). Results are discussed in terms of Er-O complex formation and effects of local randomness on cooperative inter-Er3+ energy transfer among thermal-broadened and local-field Stark-split 4I13/2 to 4I15/2 transitions. Advantages of scalability and low-cost associated with this method of producing optically active silicon-based materials are discussed.