Analytical Study of Thermal Annealing Behaviour of Erbium Emission in Er2O3-Sol-Gel Silica Films
Sufian Abedrabbo, Bashar Lahlouh, Anthony Fiory
TL;DR
This study investigates how thermal annealing affects erbium emission in Er2O3-silica films, revealing optimal emission enhancement near 850°C due to hydroxyl ion removal, with implications for silicon-based photonics.
Contribution
It provides a detailed analysis of the annealing temperature's impact on erbium photoluminescence in sol-gel silica films, highlighting a specific optimal annealing temperature.
Findings
Maximum emission enhancement at 850°C
Emission increase explained by hydroxyl ion removal
Potential for improved silicon photonics applications
Abstract
Room-temperature 1535-nm-band photoluminescence in ~126 nm silica films (6 at. % doping), produced by spin-coating an Er2O3 and tetraethylorthosilicate sol-gel formulation on silicon substrates, was studied as a function of vacuum furnace annealing (500 to 1050 degrees C). Emission is strongly enhanced for annealing near 850 degrees C, which is shown by modeling the temperature dependence as arising from thermally-activated removal of hydroxyl ions. Suitability of such a process for silicon-based applications is discussed.
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