Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$ Interfaces

TL;DR

This paper reports the fabrication of field-effect devices based on LaAlO$_3$-SrTiO$_3$ interfaces, demonstrating voltage and current gain at low voltages and moderate temperatures, advancing oxide electronics technology.

Contribution

The study introduces a novel device architecture using LaAlO$_3$-SrTiO$_3$ interfaces as active channels and dielectrics, with operational capabilities at low voltages and elevated temperatures.

Findings

Devices exhibit voltage and current gain at voltages below 1 V.

Operation demonstrated at temperatures up to 100°C.

Utilizes two-dimensional electron liquid at oxide interfaces.

Abstract

Using LaAlO$_3$-SrTiO$_3$ bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' {\textit n}-type interfaces as drain-source channels and the LaAlO$_3$ layers as gate dielectrics. With gate voltages well below 1\,V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 100\,{\deg}C.