Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel

TL;DR

This study investigates how temperature affects electrically detected spin accumulation in silicon channels, revealing differences between spin-injection and spin-extraction conditions and emphasizing the role of contact sensitivity.

Contribution

It provides new insights into the temperature dependence of spin signals in silicon, highlighting the importance of contact sensitivity alongside spin diffusion.

Findings

Spin signals differ with temperature between injection and extraction.

Spin-injection signals can be enhanced at higher temperatures.

Contact sensitivity significantly influences spin detection at the Schottky barrier.

Abstract

We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky-tunnel-barrier contact in addition to the spin diffusion in Si.