Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces

TL;DR

This study investigates how resistive switching in metal-YBCO interfaces is influenced by ion migration and phase distribution, using electrical measurements with different metals to understand the underlying mechanisms.

Contribution

It provides experimental evidence linking ion migration to phase changes and resistive switching in metal-complex oxide interfaces, supporting recent theoretical models.

Findings

Ion migration influences resistive states in YBCO interfaces.

Different metals affect the switching behavior based on their oxidation energy.

Temperature dependence of resistance reveals ion migration effects.

Abstract

In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal / YBa2Cu3O7-d (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting filaments, which modify the resistance near the interface, in accordance with the predictions of a recent model.