Pseudospin Transfer Torques in Semiconductor Electron Bilayers
Youngseok Kim, Allan H. MacDonald, Matthew J. Gilbert

TL;DR
This paper investigates how electron-electron interactions affect interlayer transport in semiconductor electron bilayers, revealing that these interactions modify tunneling behavior and can induce time-dependent responses even without spontaneous pseudospin order.
Contribution
It introduces a self-consistent quantum transport approach to analyze interaction effects on pseudospin transfer torques in bilayers without external magnetic fields.
Findings
Interaction-enhanced quasiparticle tunneling amplitudes influence tunneling I-V characteristics.
Pseudospin transfer torques can cause time-dependent responses to DC bias.
Spontaneous pseudospin order does not occur at zero field.
Abstract
We use self-consistent quantum transport theory to investigate the influence of electron-electron interactions on interlayer transport in semiconductor electron bilayers in the absence of an external magnetic field. We conclude that, even though spontaneous pseudospin order does not occur at zero field, interaction-enhanced quasiparticle tunneling amplitudes and pseudospin transfer torques do alter tunneling I-V characteristics, and can lead to time-dependent response to a dc bias voltage.
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor materials and devices · Semiconductor Quantum Structures and Devices
