Graphene-based heterojunction between two topological insulators
Oleksii Shevtsov, Pierre Carmier, Cyril Petitjean, Christoph Groth,, David Carpentier, Xavier Waintal

TL;DR
This paper investigates the transition between quantum spin Hall and quantum Hall phases in graphene with a strong magnetic field and spin-orbit coupling, revealing a topological interface with potential for spin-polarized current switching.
Contribution
It demonstrates the formation of a spin-polarized chiral state at a QSH-QH junction in graphene, enabling highly sensitive spin-polarized current control.
Findings
QSH phase remains unaffected below the SO gap in magnetic fields.
QH phase is restored above the SO gap under magnetic fields.
The QSH-QH junction hosts a spin-polarized chiral state.
Abstract
Quantum Hall (QH) and quantum spin Hall (QSH) phases have very different edge states and, when going from one phase to the other, the direction of one edge state must be reversed. We study this phenomena in graphene in presence of a strong perpendicular magnetic field on top of a spin-orbit (SO) induced QSH phase. We show that, below the SO gap, the QSH phase is virtually unaffected by the presence of the magnetic field. Above the SO gap, the QH phase is restored. An electrostatic gate placed on top of the system allows to create a QSH-QH junction which is characterized by the existence of a spin-polarized chiral state, propagating along the topological interface. We find that such a setup naturally provides an extremely sensitive spin-polarized current switch.
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