Enhanced two dimensional electron gas charge densities at III-III/I-V oxide heterostructure interfaces

TL;DR

This study uses density functional theory to reveal enhanced 2DEG charge densities and reduced effective masses at III-III/I-V oxide interfaces, offering insights for improved electronic device performance.

Contribution

It demonstrates significantly increased 2DEG charge densities and decreased electron effective masses at these heterostructure interfaces, advancing understanding of electron confinement.

Findings

2DEGs with twice the charge density compared to LaTiO3/SrTiO3

Decreased band effective masses of conduction electrons

Potential for enhanced electron mobilities

Abstract

In this paper, density functional theory calculations are used to explore the electronic and atomic reconstruction at interfaces between III-III/I-V oxides. In particular, at these interfaces, two dimensional electron gases (2DEGs) with twice the interfacial charge densities of the prototypical LaTiO3/SrTiO3 heterostructure are observed. Furthermore, a significant decrease in the band effective masses of the conduction electrons is shown, suggesting that possible enhancements in electron mobilities may be achievable. These findings represent a framework for chemically modulating 2DEGs, thereby providing a platform through which the underlying physics of electron confinement can be explored with implications for modern microelectronic devices.