A tunable, dual mode field-effect or single electron transistor

TL;DR

This paper presents a silicon-on-insulator device capable of functioning as either a field-effect transistor or a single electron transistor, with tunable transition between the two modes via gate polarization.

Contribution

It introduces a dual mode device that seamlessly switches between FET and SET operation using tunable potential gradients in SOI technology.

Findings

Device can operate as FET or SET depending on gate bias.

Gradual transition observed between the two modes.

Dual functionality achieved with silicon-on-insulator technology.

Abstract

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel.