Mott-Hubbard localization in model of electronic subsystem of doped fullerides

TL;DR

This paper models the electronic behavior of doped fullerides considering orbital degeneracy, analyzing the potential for a correlation-driven metal-insulator transition using Green functions.

Contribution

It introduces a microscopical model incorporating triple orbital degeneracy for doped fullerides and explores the metal-insulator transition at integer band filling.

Findings

Calculated energy spectrum at n=1 band filling.

Discussed the possibility of a correlation-driven metal-insulator transition.

Applied Green function method to analyze the model.

Abstract

Microscopical model of a doped fulleride electronic subsystem taking into account the triple orbital degeneracy of energy states is considered within the configurational-operator approach. Using the Green function method the energy spectrum of the model at integer band filling $n=1$ is calculated, which case corresponds to $AC_{60}$ compounds. Possible correlation-driven metal-insulator transition in the model is discussed.