Description of the plasma delay effect in silicon detectors

TL;DR

This paper introduces a novel modeling approach for the current signals in silicon detectors, incorporating Coulomb interactions and diffusion effects into the Ramo-Shockley framework.

Contribution

It presents a new method that improves the accuracy of signal modeling by including charge carrier interactions and diffusion in silicon detectors.

Findings

Enhanced modeling accuracy for silicon detector signals

Inclusion of Coulomb interactions and diffusion effects

Potential for improved detector design and analysis

Abstract

A new method of modeling of the current signal induced by charged particle in silicon detectors is presented. The approach is based on the Ramo-Shockley theorem for which the charge carrier velocities are determined by taking into account not only the external electric field generated by the electrodes, but also the Coulomb interaction between the electron and hole clouds as well as their diffusion.