Measurement of finite-frequency current statistics in a single-electron transistor

TL;DR

This paper demonstrates a method to measure current fluctuations across all relevant frequencies in a single-electron transistor using a quantum point contact, enabling detailed analysis of quantum transport processes.

Contribution

It introduces a novel on-chip detection technique for frequency-resolved current statistics in a single-electron transistor, surpassing previous fixed-frequency limitations.

Findings

Successfully measured frequency-dependent current statistics

Fully characterized fundamental tunneling processes

Enabled future studies of quantum interaction effects

Abstract

Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations in a single electron transistor (SET) can be accurately measured on all relevant frequencies using a nearby quantum point contact for on-chip real-time detection of the current pulses in the SET. We have directly measured the frequency-dependent current statistics and hereby fully characterized the fundamental tunneling processes in the SET. Our experiment paves the way for future investigations of interaction and coherence induced correlation effects in quantum transport.