Coulomb Oscillations in Antidots in the Integer and Fractional Quantum Hall Regimes

TL;DR

This paper investigates resistance oscillations in micron-scale antidots within integer and fractional quantum Hall regimes, revealing Coulomb blockade effects and tunneling charges of e and (2/3)e, respectively, based on magnetic and gate-voltage measurements.

Contribution

It provides the first detailed analysis of Coulomb oscillations in antidots across both integer and fractional quantum Hall regimes, identifying tunneling charges and edge structures.

Findings

Integer regime oscillations are Coulomb type with charge e.

At ν=2, tunneling charge is e with two charged edges.

At ν=2/3, tunneling charge is (2/3)e with a single charged edge.

Abstract

We report measurements of resistance oscillations in micron-scale antidots in both the integer and fractional quantum Hall regimes. In the integer regime, we conclude that oscillations are of the Coulomb type from the scaling of magnetic field period with the number of edges bound to the antidot. Based on both gate-voltage and field periods, we find at filling factor {\nu} = 2 a tunneling charge of e and two charged edges. Generalizing this picture to the fractional regime, we find (again, based on field and gate-voltage periods) at {\nu} = 2/3 a tunneling charge of (2/3)e and a single charged edge.