Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

TL;DR

This study demonstrates room temperature visible photoluminescence from In0.5Ga0.5As quantum dots in GaP membranes, enhanced by photonic crystal cavities, with potential for integrated optoelectronic applications.

Contribution

We report the first observation of room temperature visible photoluminescence from InGaAs quantum dots in GaP, coupled with photonic crystal cavities for emission enhancement.

Findings

Quantum dots emit at room temperature in visible range.

Photonic crystal cavities enhance emission outcoupling.

Single quantum dot emission lines observed.

Abstract

We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with lifetimes of ~200 ps. We fabricate photonic crystal cavities which provide enhanced outcoupling of quantum dot emission, allowing the observation of narrow lines indicative of single quantum dot emission. This materials system is compatible with monolithic integration on Si, and is promising for high efficiency detection of single quantum dot emission as well as optoelectronic devices emitting at visible wavelengths.