Visualizing the atomic scale electronic structure of the Ca2CuO2Cl2 Mott insulator
Cun Ye, Peng Cai, Runze Yu, Xiaodong Zhou, Wei Ruan, Qingqing Liu,, Changqing Jin, Yayu Wang

TL;DR
This study uses scanning tunneling microscopy to reveal the atomic-scale electronic structure of the Ca2CuO2Cl2 Mott insulator, uncovering the full spectrum and localized states related to doping, providing insights into high-temperature superconductivity.
Contribution
First direct atomic-scale visualization of the electronic spectrum and localized states in a parent cuprate Mott insulator, advancing understanding of high Tc superconductivity origins.
Findings
Uncovered the full electronic spectrum across the Mott-Hubbard gap.
Identified a localized in-gap electronic state associated with surface defects.
Revealed particle-hole symmetric and spatially uniform Hubbard bands.
Abstract
Although the mechanism of superconductivity in the cuprates remains elusive, it is generally agreed that at the heart of the problem is the physics of doped Mott insulators. The cuprate parent compound has one unpaired electron per Cu site, and is predicted by band theory to be a half-filled metal. The strong onsite Coulomb repulsion, however, prohibits electron hopping between neighboring sites and leads to a Mott insulator ground state with antiferromagnetic (AF) ordering. Charge carriers doped into the CuO2 plane destroy the insulating phase and superconductivity emerges as the carrier density is sufficiently high. The natural starting point for tackling high Tc superconductivity is to elucidate the electronic structure of the parent Mott insulator and the behavior of a single doped charge. Here we use a scanning tunneling microscope to investigate the atomic scale electronic…
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