Photon assisted Levy flights of minority carriers in n-InP

TL;DR

This study investigates anomalous photon-assisted transport of minority carriers in n-InP wafers, revealing Levy flight behavior with a non-exponential spatial distribution, highlighting the material's potential for studying unconventional transport phenomena.

Contribution

The paper demonstrates that minority carrier transport in n-InP follows Levy flights, a novel observation linking high quantum efficiency to anomalous transport mechanisms.

Findings

Transport follows Levy flight statistics with gamma between 0.64 and 0.79.

Spatial distribution of carriers is non-exponential, indicating anomalous diffusion.

High quantum efficiency enhances photon-assisted carrier transport.

Abstract

We study the photoluminescence spectra of n-doped InP bulk wafers, both in the reflection and the transmission geometries relative to the excitation beam. From the observed spectra we estimate the spatial distribution of minority carriers allowing for the spectral filtering due to re-absorption of luminescence in the wafer. This distribution unambiguously demonstrates a non-exponential drop-off with distance from the excitation region. Such a behavior evidences an anomalous photon-assisted transport of minority carriers enhanced owing to the high quantum efficiency of emission. It is shown that the transport conforms very well to the so-called Levy-flights process corresponding to a peculiar random walk that does not reduce to diffusion. The index gamma of the Levy flights distribution is found to be in the range gamma = 0.64 to 0.79, depending on the doping. Thus, we propose the high-efficiency direct-gap semiconductors as a remarkable laboratory system for studying the anomalous transport.