Memory Effects in the Charge Response of Lightly Doped La_{2-x}Sr_{x}CuO_{4}

TL;DR

This study investigates the memory effects and glassy behavior in the magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4}, revealing how hole dynamics influence electronic responses at low temperatures.

Contribution

It provides new insights into the connection between glassy magnetic states and charge response in lightly doped cuprates, highlighting memory effects in in-plane magnetoresistance.

Findings

Positive MR with glassy features at low T

History dependence, memory, hysteresis observed

Similar behavior to out-of-plane resistance

Abstract

The in-plane magnetoresistance (MR) of a single crystal La_{1.97}Sr_{0.03}CuO_{4} has been studied at low temperatures T using several experimental protocols. At T well below the spin-glass transition temperature, the MR becomes positive and exhibits several glassy features, such as history dependence, memory and hysteresis. These observations are qualitatively similar to the previously reported behavior of the out-of-plane resistance. The results suggest that the memory effects in the MR are related to the onset of glassiness in the dynamics of doped holes.