Non-adiabatic electron charge pumping in coupled semiconductor quantum dots

TL;DR

This paper explores non-adiabatic electron charge pumping in three coupled quantum dots, demonstrating how periodic energy level modulation induces non-zero tunneling currents, with potential applications in novel semiconductor devices.

Contribution

It introduces a new mechanism for electron pumping via non-adiabatic processes in coupled quantum dots, proposing a basis for non-stationary current-based semiconductor devices.

Findings

Periodic energy level modulation induces non-zero tunneling current.

Non-adiabatic processes enable electron pumping in quantum dot systems.

Proposal of a quantum emitter with non-stationary inverse level occupation.

Abstract

The possibility of non-adiabatic electron pumping in the system of three coupled quantum dots attached to the leads is discussed. We have found out that periodical changing of energy level position in the middle quantum dot results in non zero mean tunneling current appeared due to non-adiabatic non-equilibrium processes. The same principle can be used for fabrication of a new class of semiconductor electronic devices based on non-stationary non-equilibrium currents. As an example we propose a nanometer quantum emitter with non-stationary inverse level occupation achieved by electron pumping.