Performance of novel silicon n-in-p planar Pixel Sensors

TL;DR

This paper evaluates novel n-in-p silicon pixel sensors for the ATLAS upgrade, demonstrating their radiation hardness, high tracking efficiency, and charge collection capabilities after irradiation, suitable for high-radiation environments.

Contribution

It presents the first characterization and beam test results of n-in-p pixel sensors for high-radiation conditions in particle physics experiments.

Findings

Sensors remain functional after irradiation up to 5 x 10^15 neq/cm^2.

Achieved a tracking efficiency of 98.6%.

Collected charge of about 10 ke after irradiation.

Abstract

The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. The n-in-p modules presented here are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS readout chip FE-I3. The characterization of these devices has been performed before and after irradiation up to a fluence of 5 x 10**15 1 MeV neq cm-2 . Charge collection measurements carried out with radioactive sources have proven the functioning of this technology up to these particle fluences. First results from beam test data with a 120 GeV/c pion beam at the CERN-SPS are also discussed, demonstrating a high tracking efficiency of (98.6 \pm 0.3)% and a high collected charge of about 10 ke for a device irradiated at the maximum fluence and biased at 1 kV.