New Losses Mechanism in Graphene Nanoresonators due to the Synthetic Electric Fields caused by Inherent Out-of-Plain Membrane Corrugations

TL;DR

This paper identifies a new loss mechanism in graphene nanoresonators caused by synthetic electric fields from intrinsic out-of-plane distortions, and suggests methods to mitigate these losses to improve device performance.

Contribution

It introduces a novel dissipation mechanism specific to graphene due to synthetic electric fields from membrane corrugations and proposes strategies to enhance the quality factor.

Findings

Synthetic electric fields cause about 40% of losses in graphene nanoresonators.

Strain engineering can reduce dissipation and increase the quality factor.

Applying a perpendicular magnetic field can further enhance the quality factor.

Abstract

New losses mechanism in monolayer graphene nanoresonators caused by dissipative intravalley currents stipulated by the synthetic electric fields is considered. These fields are generated by time-dependent gauge fields arising in graphene membrane due to its intrinsic out-of- plain distortions and the influence of the external periodic electromotive force. This losses mechanism accounts for essential part (about 40 percents) of losses in graphene nanoresonator and is specific just for graphene. The ways of the minimization of this kind of dissipation (increase of the quality factor of the electromechanical system) are discussed. It is explained why one can increase quality factor by correctly chosen combination of strains (by strain engineering). Besides, it is shown that quality factor can be increased by switching on a magnetic field perpendicular to graphene membrane.