Field-effect tunneling transistor based on vertical graphene heterostructures

TL;DR

This paper presents a novel bipolar field-effect tunneling transistor using vertical graphene heterostructures with atomically thin boron nitride as a tunnel barrier, demonstrating promising room temperature switching ratios and potential for high-frequency applications.

Contribution

It introduces a new device architecture combining graphene and boron nitride for tunneling transistors, achieving room temperature operation and promising scalability.

Findings

Room temperature switching ratio of ~50.

Potential for high-frequency operation.

Scalability for large-scale integration.

Abstract

We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration.