Properties of the electron-doped infinite-layer superconductor Sr$_{1-x}$La$_{x}$CuO$_{2}$ epitaxially grown by pulsed laser deposition

TL;DR

This paper reports the growth and characterization of electron-doped Sr$_{1-x}$La$_x$CuO$_2$ superconducting thin films via pulsed laser deposition, analyzing how process parameters affect their properties.

Contribution

It introduces a detailed method for fabricating and analyzing epitaxial SLCO films, highlighting the effects of substrate choice, buffer layers, and annealing conditions.

Findings

Successful growth of epitaxial SLCO films on various substrates.

Process parameters significantly influence film quality and superconducting properties.

Detailed characterization of film structure and transport properties.

Abstract

Thin films of the electron-doped infinite-layer cuprate superconductor Sr$_{1-x}$La$_x$CuO$_2$ (SLCO) with doping $x \approx 0.15$ were grown by means of pulsed laser deposition. (001)-oriented KTaO$_3$ and SrTiO$_3$ single crystals were used as substrates. In case of SrTiO$_3$, a BaTiO$_3$ thin film was deposited prior to SLCO, acting as buffer layer providing tensile strain to the SLCO film. To induce superconductivity, the as-grown films were annealed under reducing conditions, which will be described in detail. The films were characterized by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, Rutherford backscattering spectroscopy, and electric transport measurements at temperatures down to $T = 4.2\,$K. We discuss in detail the influence of different process parameters on the final film properties.